Numerical Simulation of Infrared Laser Probing Techniques

Exploiting the dependence of the refractive index on carrier concentration and temperature, various infrared laser probing techniques enable the experimental analysis of the carrier and heat flow distributions in the interior of semiconductor devices. In this work we present a complete numerical simulation sequence for the whole measurement process. It includes the electrothermal device simulation of the device under test, the calculation of the refractive index modulation, and the physically rigorous calculation of the propagation of the probing beam. The applicability of this method is demonstrated for the laser absorption technique.